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1. Field of the Invention The present invention relates to a method of preparing a solid-state image pickup device, and more particularly, to a method of forming a photoelectric conversion film on a semiconductor substrate. 2. Description of the Related Art Solid-state image pickup devices are widely used for the digital camera in portable devices, such as mobile phones and digital cameras, and in a TV camera. As the market of solid-state image pickup devices grows, semiconductor fabrication technologies are required to increase the number of pixels. One example of such a technology is the so-called back-illuminated solid-state image pickup device in which light is introduced from the back side of the device substrate. Such a back-illuminated solid-state image pickup device has characteristics superior to front-illuminated solid-state image pickup devices and is widely used for an image sensor used for digital cameras, including digital video cameras (DVC). In a typical back-illuminated solid-state image pickup device, a SiO2 film is formed on the surface of the device substrate, and then a micro-lens is formed on the SiO2 film. The micro-lens is formed on a device layer in which photoelectric conversion films, such as a P-type well, a P-type region, an N-type region, and an N-type well, are formed, so that the photoelectric conversion films are shielded by the micro-lens. The photoelectric conversion films absorb light introduced through the back side of the device substrate, and generate signal charge in response to the light. The signal charge is converted into a signal voltage and is read out as an image signal. In an image sensor used for digital cameras and digital video cameras, the number of pixels is increasing more and more. In such a case, the number of photoelectric conversion films in the device layer is also increasing, resulting in an increase in the number of micro-lenses formed on the surface of the device layer. However, the SiO2 film is formed by a chemical vapor deposition (CVD) process and has a thickness of about 10 nm to 30 nm. As a result, the SiO2 film is also formed on the micro-lens. When the thickness of the SiO2 film formed on the micro-lens is the same as or greater than the SiO2 film formed on the device layer, the light incident on the micro-lens is reflected
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